Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory applicationDOI: info:10.1088/1361-6463/aaa1b9v. 51No. 5IOP Publishing055108
Chen, Ying-Chen, Lin, Chih-Yang, Huang, Hui-Chun, Kim, Sungjun, Fowler, Burt, Chang, Yao-Feng, Wu, Xiaohan, Xu, Gaobo, Chang, Ting-Chang, and Lee, Jack C. 2018. "Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application." Journal of Physics D: Applied Physics, 51, (5) 055108. https://doi.org/10.1088/1361-6463/aaa1b9.
ID: 154760
Type: article
Keywords: SAO